Suppression of sublinearity of light–current curve in 850 nm quantum well laser with asymmetric barrier layers-Reference-Cited by-同舟云学术

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Suppression of sublinearity of light–current curve in 850 nm quantum well laser with asymmetric barrier layers

Published:2015-07 Issue:14 Volume:51 Page:1106-1108
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Zubov F.I.¹,Maximov M.V.¹,Shernyakov Yu.M.²,Kryzhanovskaya N.V.¹,Semenova E.S.³,Yvind K.³,Asryan L.V.⁴,Zhukov A.E.¹

Affiliation:

1. St. Petersburg Academic UniversitySt. Petersburg194021Russia

2. Ioffe Physical‐Technical Institute of RASSt. Petersburg194021Russia

3. DTU FotonikTechnical University of DenmarkKgs. LyngbyDK‐2800Denmark

4. Virginia Polytechnic Institute and State UniversityBlacksburgVirginia24061USA

Funder

European Commission

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.1392

Reference10 articles.

1. Internal efficiency of semiconductor lasers with a quantum-confined active region

2. 16 W continuous‐wave output power from 100 µm‐aperture laser with quantum well asymmetric heterostructure;Pikhtin N.A.;Electron. Lett.,2004

3. Efficient high‐power laser diodes;Crump P.;IEEE J. Sel. Top. Quantum Electron.,2013

4. 1.3 μm multiquantum well decoupled confinement heterostructure (MQW‐DCH) laser diodes;Hausser S.;IEEE J. Quantum Electron.,1993

5. Novel design of AlGaInAs‐InP lasers operating at 1.3 μm;Kazarinov R.F.;IEEE J. Quantum Electron.,1995

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3. Effect of Ga_1−xInxAs_1−yPy Al-free asymmetric barrier on GaAs-based 808-nm laser diode;Optics Letters;2022-02-23

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