Integratable trench MOSFET with ultra‐low specific on‐resistance-Reference-Cited by-同舟云学术

Integratable trench MOSFET with ultra‐low specific on‐resistance

Published:2015-08 Issue:17 Volume:51 Page:1348-1350
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Yin Chao¹,Wei Jie¹,Zhou Kun¹,Luo Xiaorong¹

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054SichuanPeople's Republic of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.1493

Reference10 articles.

1. Low on‐resistance SOI dual‐trench‐gate MOSFET;Luo X.;IEEE Trans. Electron Devices,2012

2. An improved superjunction structure with variation vertical doping profile;Lin Z.;IEEE Trans. Electron Devices,2015

3. Variation of lateral width technique in SoI high‐voltage lateral double‐diffused metal–oxide–semiconductor transistors using high‐k dielectric;Guo Y.;IEEE Trans. Electron Device Lett.,2015

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