Linear X‐band GaN HEMT transformer‐based Doherty power amplifier
Author:
Affiliation:
1. School of Electrical Engineering and Computer ScienceInstitute of New Media and CommunicationsSeoul National UniversitySeoul151‐742Republic of Korea
Funder
National Research Foundation of Korea
Samsung
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.4464
Reference7 articles.
1. Optimised Doherty power amplifier with auxiliary peaking cell
2. Gallium‐nitride microwave Doherty power amplifier with 40 W PEP and 68% PAE;Cho K.J.;Electron. Lett.,2014
3. Analysis and optimization of transformer‐based power combining for back‐off efficiency enhancement;Kaymaksut E.;IEEE Trans. Circuits Syst.,2013
4. Transformer-Based Uneven Doherty Power Amplifier in 90 nm CMOS for WLAN Applications
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2. Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach;International Journal of RF and Microwave Computer-Aided Engineering;2019-12-28
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