Transconductance improvement technique for bulk‐driven OTA in nanometre CMOS process
Author:
Affiliation:
1. School of Geophysics and Information TechnologyChina University of GeosciencesBeijing100083People's Republic of China
2. Institute of Microelectronics, Tsinghua UniversityBeijing100084People's Republic of China
Funder
Fundamental Research Funds for the Central Universities
National Natural Science Foundation of China
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.1559
Reference7 articles.
1. A 1.2 V 140 nW 10 bit sigma‐delta modulator for electroencephalogram applications;Lopez‐Morillo E.;IEEE Trans. Biomed. Circuits Syst.,2008
2. An Ultra-Low-Voltage Ultra-Low-Power CMOS Miller OTA With Rail-to-Rail Input/Output Swing
3. A 60-dB Gain OTA Operating at 0.25-V Power Supply in 130-nm Digital CMOS Process
4. 0.5-V analog circuit techniques and their application in OTA and filter design
5. 1-V Rail-to-Rail CMOS OpAmp With Improved Bulk-Driven Input Stage
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