Super junction LDMOS with step field oxide layer-Reference-Cited by-同舟云学术

Super junction LDMOS with step field oxide layer

Published:2016-11 Issue:11 Volume:11 Page:666-669
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Cao Zhen¹,Duan Baoxing¹,Yuan Xiaoning¹,Yuan Song¹,Yang Yintang¹

Affiliation:

1. Key Laboratory of the Ministry of Education for Wide Band‐Gap Semiconductor Materials and DevicesSchool of MicroelectronicsXidian UniversityXi'an710071People's Republic of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2016.0331

Reference18 articles.

1. ChenX.B.:‘Semiconductor power devices with alternating conductivity type high voltage breakdown regions’.U.S. Patent 5216275 1993

2. NgR.UdreaF.ShengK.et al.: ‘Lateral unbalanced super junction (USJ)/3D‐RESURF for high breakdown voltage on SOI’.Int. Symp. Power Semiconductor Devices and ICs (ISPSD) 2001 pp.395–398

3. Nassif‐KhalilS.G.AndreC.SalamaT.: ‘Super junction LDMOST in silicon‐on‐sapphire technology (SJ‐LDMOST)’.Proc. Int. Symp. Power Semiconductor Devices and ICs (ISPSD) 2002 pp.81–84

4. Super-junction LDMOST on a silicon-on-sapphire substrate

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