3.6 m cm2, 1726 V 4H-SiC normally-off trenched-and-implanted vertical JFETs and circuit applications
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/ip-cds_20040452?crawler=true&mimetype=application/pdf
Reference21 articles.
1. 1800 V NPN bipolar junction transistors in 4H-SiC
2. Semiconductors for high‐voltage, vertical channel field‐effect transistors
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1. SiC and GaN Power Devices;More-than-Moore Devices and Integration for Semiconductors;2023
2. 4H-SiC Super-Junction JFET: Design and Experimental Demonstration;IEEE Electron Device Letters;2020-03
3. Static and switching characteristics of 3.3 kV double channel-doped SiC vertical junction field effect transistor in cascode configuration;Japanese Journal of Applied Physics;2015-03-24
4. Switching Performance of Normally-off 4H-SiC TI-VJFET;Materials Today: Proceedings;2015
5. Effect of Channel Width on Breakdown Analysis of Normally-Off 4H-SiC Trenched and Implanted VJFET;Materials Today: Proceedings;2015
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