Wideband closed-form expressions for direct extraction of HBT small-signal parameters for all amplifier bias classes
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/ip-cds_20045077?crawler=true&mimetype=application/pdf
Reference22 articles.
1. A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors (HBT's)
2. Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit
3. A new parameter extraction technique for small-signal equivalent circuit of polysilicon emitter bipolar transistors
4. A systematic layout-based method for the modeling of high-power HBT's using the scaling approach
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