Tritiated amorphous silicon betavoltaic devices

Author:

Kosteski T.,Kherani N.P.,Stradins P.,Gaspari F.,Shmayda W.T.,Sidhu L.S.,Zukotynski S.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference31 articles.

1. Street, R.A.: ‘Technology and applications of amorphous silicon' Springer Series in Materials Science’, (Springer, New York37, 2000)

2. Bruno, G., Capezzuto, P., Madan, A., ‘Plasma deposition of amorphous silicon-based materials, Plasma−materials interactions’, (Academic Press, Boston 1995)

3. Street, R.A.: ‘Hydrogenated amorphous silicon’, (Cambridge University Press, Cambridge, UK 1991), p. 203

4. Fuhs, W.: ‘Electronic properties of amorphous silicon (a-Si:H)’, Kanicki, J., Amorphous and microcrystalline semiconductor devices, (Artech House, Boston 1992),II, 1, p. 1–53

5. Luft, W., and Tsuo, Y.S.: ‘Hydrogenated amorphous silicon alloy deposition processes’ Applied physics’, (Marcel Dekker, New York 1993),1,

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