Electrical localisation of full open defects in comb–meander–comb structures
Author:
Affiliation:
1. Electronic Engineering DepartmentUniversitat Politècnica de CatalunyaAvinguda Diagonal, 647, P9Barcelona08028Spain
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2014.3104
Reference5 articles.
1. Resistance characterisation for weak open defects;Rodríguez‐Montañés R.;IEEE Des. Test Comput.,2002
2. Extraction of defect size distribution in an IC layer using test structure data;Khare J.B.;IEEE Trans. Semiconduct. Manuf.,1994
3. Localization and Electrical Characterization of Interconnect Open Defects
4. Gate leakage impact on full open defects in interconnect lines;Arumi D.;IEEE Trans. Very Large Scale Integr. (VLSI) Syst.,2011
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