3‐T ISFET front‐end utilising parasitic device capacitance
Author:
Affiliation:
1. Centre for Bioinspired TechnologyInstitute of Biomedical EngineeringImperial CollegeLondonLondonUnited Kingdom
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2014.2488
Reference5 articles.
1. Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology
2. ISFET characteristics in CMOS and their application to weak inversion operation
3. ISFET sensor coupled with CMOS read-out circuit microsystem
4. New ISFET sensor interface circuit for biomedical applications
5. A Robust ISFET pH-Measuring Front-End for Chemical Reaction Monitoring
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