Subthreshold DC‐gain enhancement by exploiting small size effects of MOSFETs
Author:
Affiliation:
1. Institute of Neuroinformatics, University of Zürich, and ETH ZürichZürichSwitzerland
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2014.1056
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4. A 1‐V process‐insensitive current‐scalable two‐stage opamp with enhanced DC gain and settling behavior in 65‐nm digital CMOS;Taherzadeh‐Sani M.;IEEE J. Solid‐State Circuits,2011
5. Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's
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