Resistive switching mechanism in printed non‐volatile Ag/ZrO 2 /ITO sandwiched structure
Author:
Affiliation:
1. Department of Electrical EngineeringCOMSATS Institute of Information Technology LahoreLahorePakistan
2. Department of Electronic EngineeringJeju National UniversityJeju‐SiJeju690Republic of Korea
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2014.2517
Reference12 articles.
1. Low‐Frequency Negative Resistance in Thin Anodic Oxide Films
2. Current switching of resistive states in magnetoresistive manganites
3. Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$
4. The missing memristor found
5. Reproducible unipolar resistance switching in stoichiometric ZrO2 films
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