Power‐efficient low‐noise 86 GHz broadband amplifier in 130 nm SiGe BiCMOS
Author:
Affiliation:
1. Department of Electrical and Computer EngineeringUniversity of DelawareNewarkDEUSA
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2014.0367
Reference15 articles.
1. Energy-efficient communication
2. A 92 mW, 20 dB gain, broadband lumped SiGe amplifier with bandwidth exceeding 67 GHz
3. Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s
4. An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology
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1. A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process;Micromachines;2024-08-26
2. A 63.74 Db Gain 60.84 Ghz Bandwidth Power-Efficient Transimpedance Amplifier in 130 Nm Sige Bicmos Technology;SSRN Electronic Journal;2024
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4. A low-noise 71-dBΩ transimpedance 31-GHz bandwidth optical receiver with automatic gain control in 0.13-µm SiGe BiCMOS;IEICE Electronics Express;2019
5. 100 Gb/s Differential Linear TIAs With Less Than 10 pA/ $\sqrt {\mathrm {Hz}}$ in 130-nm SiGe:C BiCMOS;IEEE Journal of Solid-State Circuits;2018-02
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