Applications of TCAD Simulation Software for Fabrication and study of Process Variation Effects on Threshold Voltage in 180nm Floating-Gate Device
Author:
Publisher
ASTES Journal
Subject
Management of Technology and Innovation,Physics and Astronomy (miscellaneous),Engineering (miscellaneous)
Link
https://www.astesj.com/publications/ASTESJ_060116.pdf
Reference24 articles.
1. T. D. Cong, T. Le Thanh, H. M. Tri, T. Hoang, "The Simulation Study of Process Variation on Threshold Voltage in 180nm Floating-Gate device," in 2019 19th International Symposium on Communications and Information Technologies (ISCIT), 211-214, 2019, doi:10.1109/ISCIT.2019.8905125.
2. R. B. Wunderlich, F. Adil, P. Hasler, "Floating Gate-Based Field Programmable Mixed-Signal Array," IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 21(8), 1496-1505, 2013, doi:10.1109/TVLSI.2012.2211049.
3. T. Kim, K. Park, T. Jang, M.-H. Baek, Y. S. Song, B.-G. Park, "Input- modulating adaptive neuron circuit employing asymmetric floating-gate MOS- FET with two independent control gates," Solid-State Electronics, 163, 107667, 2020, doi:https://doi.org/10.1016/j.sse.2019.107667.
4. X. He, X. Zhu, L. Duan, Y. Sun, C. Ma, "A 14-mW PLL-Less Receiver in 0.18- µm CMOS for Chinese Electronic Toll Collection Standard," IEEE Trans- actions on Circuits and Systems II: Express Briefs, 61(10), 763-767, 2014, doi:10.1109/TCSII.2014.2345303.
5. J. Sun, C. C. Boon, X. Zhu, X. Yi, K. Devrishi, F. Meng, "A Low- Power Low-Phase-Noise VCO With Self-Adjusted Active Resistor," IEEE Microwave and Wireless Components Letters, 26(3), 201-203, 2016, doi: 10.1109/LMWC.2016.2521167.
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