Parameter Extraction of Extended Floating Gate Field Effect Transistors (EGFETs): Estimating the Threshold Voltage, Series Resistance, and Mobility Degradation From I-V Measurements-Reference-Cited by-同舟云学术

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Parameter Extraction of Extended Floating Gate Field Effect Transistors (EGFETs): Estimating the Threshold Voltage, Series Resistance, and Mobility Degradation From I-V Measurements

Published:2023 Issue: Volume: Page:
ISSN:1556-5068
Container-title:SSRN Electronic Journal
language:en
Short-container-title:SSRN Journal

Author:

Park Yunsoo,Pandey Santosh

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference37 articles.

1. EGFET-based pH Sensor coupled with Low-cost Electrochemical Screen-printed Electrodes;B E Alvarez-Serna;J. Phys. Conf. Ser,2021

2. TiO2 Nano Flowers Based EGFET Sensor for pH Sensing;C.-C Yang;Coatings,2019

3. Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing;S Pullano;Sensors,2019

4. Functionalization of an extended-gate field-effect transistor (EGFET) for bacteria detection;L K�nemund;Sci. Rep,2022

5. Floating-Gate Ion Sensitive Field-Effect Transistor for Chemical and Biological Sensing;B Zhao;Mater. Res. Soc. Proc,2004

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