High-Throughput Methodology for the Realization of High-Entropy Sub-Nm Equivalent-Oxide-Thickness High-Dielectric-Constant Ba(Ti,Zr,Ta,Hf,Mo)O3 Film-Based Metal-Oxide-Semiconductor-Related Devices-Reference-Cited by-同舟云学术

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High-Throughput Methodology for the Realization of High-Entropy Sub-Nm Equivalent-Oxide-Thickness High-Dielectric-Constant Ba(Ti,Zr,Ta,Hf,Mo)O3 Film-Based Metal-Oxide-Semiconductor-Related Devices

Published:2023 Issue: Volume: Page:
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Author:

Nguyen Van Dung,Nagata Takahiro,Chang Kao-Shuo

Publisher

Elsevier BV

Reference62 articles.

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4. Electrical properties of high-k gate dielectrics: challenges, current issues and possible solutions;M Houssa;Mater. Sci. Eng. R Rep,2006

5. Electrical properties of SiO2/TiO2 high-k gate dielectric stack;M K Bera;Mater. Sci. Semicond. Process,2006

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