Numerical Modelling of Cz- Β-Ga2o3 Crystal Growth in Reactive Atmosphere

Author:

Dropka Natasha,Chappa Gagan Kumar,Artemyev Vladimir V.,Smirnov Andrey,Klimm Detlef

Publisher

Elsevier BV

Reference27 articles.

1. Resonant Photoemission at the O1s threshold to characterize ?-Ga2O3 single crystals;M Michling;IOP Conference Series: Materials Science and Engineering,2012

2. Growth and characteristics of optical single crystals for UV/VUV applications;K Shimamura;Journal of Fluorine Chemistry,2011

3. Ga2O3 Thin Film Growth on c-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors;T Oshima;Japanese Journal of Applied Physics,2007

4. Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor;K Matsuzaki;Thin Solid Films,2006

5. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal ?-Ga2O3 (010) substrates;M Higashiwaki;Applied Physics Letters,2012

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