Investigation of Amorphous (in X Ga1- X )2o3 Alloy Films Modulated by Indium Content for Optimization in Solar-Blind Photodetector

Author:

Wang Chen,Zhang Yu-Chao,Fan Teng-Min,Yi Cong,Zhou Chen-Hao,Kang Pin-Chun,Wu Wan-Yu,Wuu Dong-Sing,Lai Feng-Min,Lien Shui-Yang

Publisher

Elsevier BV

Reference53 articles.

1. Phase Control of Crystalline Ga 2 O 3 Films by Plasma-Enhanced Atomic Layer Deposition;V D Wheeler;Chem. Mater,2020

2. Ge-Doped ?-Ga 2 O 3 MOSFETs;N Moser;IEEE Electron Device Lett,2017

3. Perspective: Ga 2 O 3 for ultra-high power rectifiers and MOSFETS;S J Pearton;J. Appl. Phys,2018

4. Growth and characterization of Si-doped Ga2O3 thin films by remote plasma atomic layer deposition: Toward UVC-LED application;X.-Y Zhang;Surface and Coatings Technology,2022

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