Fast Neutron Irradiation Effects on Si- and Gan-Based Avalanche Photodiodes

Author:

Fu Xiang,Wei Biao,Kang Jianbin,Wang Wangping,Tang Ge,Li Qian,Chen Feiliang,Li Mo

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference21 articles.

1. Effects of multiplication layers on dark current components of InGaAs/InP avalanche photodiodes;A Liu;Appl Opt,2019

2. Numerical simulation of neutron radiation effects in avalanche photodiodes;M D Osborne;IEEE Trans Electron Devices,2000

3. Comparison of radiation damage in silicon induced by proton and neutron irradiation;A Ruzin;IEEE Trans Nucl Sci,1999

4. Back-illuminated separate absorption and multiplication GaN avalanche photodiodes;J L Pau;Appl Phys Lett,2008

5. Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes;X Wang;J Appl Phys,2014

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