Topology of Boron Substitutional Defects in Single-Walled Carbon Nanotubes: A First-Principles Study-Reference-Cited by-同舟云学术

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Topology of Boron Substitutional Defects in Single-Walled Carbon Nanotubes: A First-Principles Study

Published:2024 Issue: Volume: Page:
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Author:

prachamon wutthisak,Jaiboon Oruethai,Komin Sittipong,Ruttanapun Chesta,Limpijumnong Sukit

Publisher

Elsevier BV

Reference32 articles.

1. The physical and chemical properties of heteronanotubes;P Ayala;Rev. Mod. Phys,2010

2. Effects of nanodomain formation on the electronic structure of doped carbon nanotubes;D L Carroll;Phys. Rev. Lett,1998

3. Evidence for substitutional boron in doped single-walled carbon nanotubes;P Ayala;Applied Physics Letters,2010

4. Density-functional study of hydrazine doped singlewalled carbon nanotubes as an n-type semiconductor;W Prachamon;Physica E: Low-dimensional Systems and Nanostructures,2020

5. Inhomogeneous electron gas;P Hohenberg;Phys. Rev,1964

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