Perpendicular Magnetic Anisotropy and its Voltage Control in MgO/CoFeB/MgO Junctions with Atomically Thin Ta Adhesion Layers-Reference-Cited by-同舟云学术

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Perpendicular Magnetic Anisotropy and its Voltage Control in MgO/CoFeB/MgO Junctions with Atomically Thin Ta Adhesion Layers

Published:2021 Issue: Volume: Page:
ISSN:1556-5068
Container-title:SSRN Electronic Journal
language:en
Short-container-title:SSRN Journal

Author:

Yamamoto Tatsuya,Nozaki Takayuki,Yakushiji Kay,Tamaru Shingo,Kubota Hitoshi,Fukushima Akio,Yuasa Shinji

Publisher

Elsevier BV

Reference62 articles.

1. Influence of perpendicular magnetic anisotropy on spin-transfer switching current in CoFeB/MgO/CoFeB magnetic tunnel junctions;K Ando;J. Appl. Phys,2009

2. A perpendicular-285 anisotropy CoFeB-MgO magnetic tunnel junction;S Ikeda;Nat. Mater,2010

3. Emission of spin waves by a magnetic multilayer traversed by a current;L Berger;Phys. Rev. B,1996

4. Current-driven excitation of magnetic multilayers;J C Slonczewski;J

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