Enhanced Optoelectronic Properties of Solution-Processed Metal-Chalcogenide Devices Via Hydrogen-Driven Post-Annealing-Reference-Cited by-同舟云学术

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Enhanced Optoelectronic Properties of Solution-Processed Metal-Chalcogenide Devices Via Hydrogen-Driven Post-Annealing

Published:2022 Issue: Volume: Page:
ISSN:1556-5068
Container-title:SSRN Electronic Journal
language:en
Short-container-title:SSRN Journal

Author:

Nam Seung-Ji,Kwak Jee Young,Kwon Sung Min,Kang Dong Won,Lee Jong-Min,Lee Paul,Kim Myung-Gil,Kim Yong-Hoon,Kim Jaehyun,Park Sung Kyu

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference39 articles.

1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor Author ( s ): Kenji;K Nomura,2010

2. Flexible metal-oxide devices made by room-temperature photochemical activation of sol?�"gel films;Y H Kim;Nature,2012

3. Oxide semiconductor thin-film transistors: A review of recent advances;E Fortunato;Adv. Mater,2012

4. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric;P K Nayak;Appl. Phys. Lett,2013

5. Fabrication of highperformance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor;C H Choi;J. Mater. Chem. C,2015

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