Author:
Teng Yan,zhao Weikang,Tang Kun,Yang Kai,Zhao Gengyou,Zhu Shunming,ye Jiandong,Gu Shulin
Reference39 articles.
1. Diamond Schottky barrier diode for high-temperature, high-power, and fast switching applications;H Umezawa;J. Appl. Phys,2014
2. Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations;T Matsumoto;Appl. Phys. Lett,2019
3. The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD;A Chayahara;Diam. Relat. Mater,2004
4. Nitrogen stabilized (100) texture in chemical vapor deposited diamond films;R Lecher;Appl. Phys. Lett,1994