Si–Sn Codoped N-Gan Film Grown on an Amorphous Glass Substrate with Dc-Pulse Sputtering

Author:

Liu Wei-Sheng,Chang Yu-Lin,Chen Tzu-Chun,Yu Shih-Chen,Kuo Hsing-Chun

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference55 articles.

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3. Progress in GaN-based quantum dots for optoelectronics applications;Y Arakawa;IEEE Journal of Selected Topics in Quantum Electronics,2002

4. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives;G Meneghesso;IEEE Transactions on Device and Materials Reliability,2008

5. Enhancement Mode Gallium Nitride (eGaN TM ) FET Characteristics under Long Term Stress;A Lidow;Proc. GOMAC Tech,2011

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