The Same Band Alignment of Two Hybrid 2d/3d Vertical Heterojunctions Formed by Combining Monolayer Mos2 with Semi-Polar (11-22) Gan and C-Plane (0001) Gan-Reference-Cited by-同舟云学术

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The Same Band Alignment of Two Hybrid 2d/3d Vertical Heterojunctions Formed by Combining Monolayer Mos2 with Semi-Polar (11-22) Gan and C-Plane (0001) Gan

Published:2022 Issue: Volume: Page:
ISSN:1556-5068
Container-title:SSRN Electronic Journal
language:en
Short-container-title:SSRN Journal

Author:

Xing Shu'an,Zhao Guijuan,Mao Bangyao,Huang Heyuan,Wang Lianshan,Li Xunshuan,Yang Wenge,Liu Guipeng,Yang Jianhong

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference45 articles.

1. Band Alignment of 2D Transition Metal Dichalcogenide Heterojunctions;M.-H Chiu;Advanced Functional Materials,2017

2. Determination of band alignment at twodimensional MoS2/Si van der Waals heterojunction;N Goel;Journal of Applied Physics,2018

3. Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by X-ray photoelectron spectroscopy;X Liu;Journal of Alloys and Compounds,2015

4. Band Alignment at GaN/Single-Layer WSe2 Interface;M Tangi;ACS Appl Mater Interfaces,2017

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