Investigating the Optical Behavior of Electrochemically Passivated Highly Doped N-Inp with PPP Nanofilm

Author:

Labchir Nabil,Odonnell John,Frengnaux Mathieu,Goncalves Anne-marie,Kaassamani Shatha,Etcheberry Arnaud,Pelouard Jean-Luc

Publisher

Elsevier BV

Reference24 articles.

1. InPNBi/InP heterostructures for optoelectronic applications: A k? p investigation;I Mal;Mater. Sci. Semicond. Process,2022

2. InP-based butt-joint coupled waveguide photodiodes integrated with various functions for 100 GBaud coherent detection;T Okimoto;IEEE Journal of Selected Topics in Quantum Electronics

3. Properties of a facile growth of spray pyrolysis-based rGO films and device performance for Au/rGO/n-InP Schottky diodes;F E Cimilli Catir;J. Mater. Sci.: Mater. Electron,2021

4. Encapsulation study of MOVPE grown InAs QDs by InP towards 1550 nm emission;S Hasan;J. Cryst. Growth,2021

5. Effect of an inserted Al 2 O 3 passivation layer for atomic layer deposited HfO 2 on indium phosphide;Q Xu;Semiconductor Science and Technology,2021

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