Application of Dual-Layer Polysilicon Deposited by Pecvd in N -Type Topcon Solar Cells

Author:

Ding Dong,Du Daxue,Quan Cheng,Bao Jie,Ma sheng,Huang Huanpei,Li Lin,Li Zhengping,Liu Ronglin,Du Zheren,Shen Wenzhong

Publisher

Elsevier BV

Reference28 articles.

1. 58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design;D M Chen;Sol. Energy Mater. Sol. Cells,2020

2. Passivating contacts for crystalline silicon solar cells;T G Allen;Nat. Energy,2019

3. A 720 mV open circuit voltage SiO x : c-Si: SiO x double hetero structure solar cell;E Yablonovitch;Appl. Phys. Lett,1985

4. Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics;F Feldmann;Sol. Energy Mater. Sol. Cells,2014

5. Silicon heterojunction solar cells with up to 26.81% efficiency achieved by electrically optimized nanocrystalline-silicon hole contact layers;H Lin;Nat. Energy,2023

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