Some Properties of Metal Organic Chemical Vapour Deposited (MOCVD) Manganese Nitride Thin Films (MnxNy) Using A Single Precursor of Tetraamminebis-(hexamethylenetetrammine)Manganese(II) Chloride [Mn(HMTA)2(NH3)4]Cl2-Reference-Cited by-同舟云学术

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Some Properties of Metal Organic Chemical Vapour Deposited (MOCVD) Manganese Nitride Thin Films (MnxNy) Using A Single Precursor of Tetraamminebis-(hexamethylenetetrammine)Manganese(II) Chloride [Mn(HMTA)2(NH3)4]Cl2

Published:2023 Issue: Volume: Page:
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Author:

Akinwumi Olakunle Abiodun,Famojuro Adetokunbo Temitope,Akinwunmi Olumide Oluwole,kehinde olafisan,Olaopa Priscilla O.

Publisher

Elsevier BV

Reference24 articles.

1. The manganese nitrides ?-Mn3N2and ?-Mn6N5 + x:nuclear and magnetic structures;A Leineweber;J. Mater. Chem,2000

2. Crystalline phase and orientation control of manganese nitride grown on MgO(001) by molecular beam epitaxy;H Yang;J. Appl. Phys,2002

3. The potential of manganese nitride based materials as nitrogen transfer reagents for nitrogen chemical looping;S Laassiri;Appl. Catal. B Environ,2018

4. The Mn-N (Manganese-Nitrogen) system;N A Gokcen;Bull. Alloy Phase Diagrams,1990

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