Improvement in Crystallinity of Large-Scale Mote2 Thin Film and Electrical Properties of Transistors Using High-Pressure Annealing

Author:

Lee Wen-Hsi,Chen S.T.,Lee Jason

Publisher

Elsevier BV

Reference19 articles.

1. Graphene, hexagonal boron nitride, and their heterostructures: properties and applications;Jingang Wang;RSC advances,2017

2. Molecular Beam Epitaxy Scalable Growth of Wafer-Scale Continuous Semiconducting Monolayer MoTe 2 on Inert Amorphous Dielectrics;Qingyuan He;Advanced Materials,2019

3. Millimeter-scale single-crystalline semiconducting MoTe 2 via solid-to-solid phase transformation;Xiaolong Xu;Journal of the American Chemical Society,2019

4. Synthesis of atomically thin transition metal ditelluride films by rapid chemical transformation in solution phase;Anupam Giri;Chemistry of Materials,2018

5. Epitaxial electrodeposition of single crystal MoTe 2 nanorods and Li+ storage feasibility;Eun - Kim;Journal of Electroanalytical Chemistry,2020

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