Studying of Threshold Switching Behavior Based on Programmable Metallization Cells Selector by Kmc Method

Author:

Zhang Puyi,Ma Guokun,Xiong Zhiyuan,Chen Ao,Wang Cheng,Zhang Lei,Liu Nengfan,Yuan Xiaoxu,Liu Tianjian,Wang Hao

Publisher

Elsevier BV

Reference34 articles.

1. Ultralow power neuromorphic accelerator for deep learning using Ni/HfO 2 /TiN resistive random access memory;H.-H Le;IEEE Electron Devices Technology & Manufacturing Conference (EDTM),2020

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3. Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (mlc) storage, modeling, and applications;F Zahoor;Nanoscale Res. Lett,2020

4. Advances of RRAM devices: resistive switching mechanisms, materials and bionic synaptic application;Z Shen;Nanomaterials-basel,2020

5. Thermal crosstalk in 3-dimensional RRAM crossbar array;P Sun;Sci. Rep,2015

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