High Aspect Ratio Trench Etching Under Ion Tilting in Rf Biased Inductively Coupled Plasma-Reference-Cited by-同舟云学术

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High Aspect Ratio Trench Etching Under Ion Tilting in Rf Biased Inductively Coupled Plasma

Published:2022 Issue: Volume: Page:
ISSN:1556-5068
Container-title:SSRN Electronic Journal
language:en
Short-container-title:SSRN Journal

Author:

Yoon Min Young,Yeom H. J.,Kim Jung Hyung,Jeong Jong-Ryul,Lee Hyochang

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference44 articles.

1. Review of inductively coupled plasmas: Nano-applications and bistable hysteresis physics;H C Lee;Appl. Phys. Rev,2018

2. Plasma etching: Yesterday, today, and tomorrow;V M Donnelly;J. Vac. Sci. Technol. A Vacuum, Surfaces, Film,2013

3. High aspect ratio silicon etch: A review;B Wu;J. Appl. Phys,2010

4. Plasma etching: Principles, mechanisms, application to micro-and nano-technologies;C Cardinaud;Appl. Surf. Sci,2000

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