Doping of Sn-Based Two-Dimensional Perovskite Semiconductor for High-Performance Field-Effect Transistors and Thermoelectric Devices-Reference-Cited by-同舟云学术

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Doping of Sn-Based Two-Dimensional Perovskite Semiconductor for High-Performance Field-Effect Transistors and Thermoelectric Devices

Published:2022 Issue: Volume: Page:
ISSN:1556-5068
Container-title:SSRN Electronic Journal
language:en
Short-container-title:SSRN Journal

Author:

Liu Yu,Chen Ping-An,Qiu Xincan,Guo Jing,Xia Jiangnan,Wei Huan,Xie Haihong,Hou Shijin,He Mai,Wang Xiao,Zeng Zebing,Jiang Lang,Liao Lei,Hu Yuanyuan

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference75 articles.

1. Solution-processed semiconductors for next-generation photodetectors;F P Garc�a De Arquer;Nature Reviews Materials

2. A Review of Perovskites Solar Cell Stability;R Wang;Adv. Funct. Mater,2019

3. Efficient light-emitting diodes from mixed-dimensional perovskites on a fluoride interface;B Zhao;Nature Electronics,2020

4. Recent developments in fabrication and performance of metal halide perovskite field-effect transistors;Y Liu;Journal of Materials Chemistry C,2020

5. Resolving spatial and energetic distributions of trap states in metal halide perovskite solar cells;Z Ni;Science

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