Author:
Monaghan Finn,Martinez Antonio,Evans Jon,Jennings Mike
Reference21 articles.
1. Auger recombination in 4H-SiC: Unusual temperature behavior;A Galeckas;Applied Physics Letters,1997
2. Influence of lateral straggling of implated aluminum ions on high voltage 4H-SiC device edge termination design;Yi Jiang;Materials Science Forum,2018
3. Experimental study on short-channel effects in double-gate silicon carbide JFETs;M Kaneko;IEEE Transactions on Electron Devices,2020
4. Interface state density of SiO2/p-type 4H-SiC (0001),(112�),(110 0) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes;Takuma Kobayashi;Applied Physics Letters,2016