Defect Characterization of N-Rich Ganas Tertiary Alloys-Reference-Cited by-同舟云学术

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Defect Characterization of N-Rich Ganas Tertiary Alloys

Published:2023 Issue: Volume: Page:
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Author:

Grodzicki Miłosz,Liedke Maik O.,Moszak K.,Olszewski W.,Pawlaczyk Ł.,Majchrzak D.,Idczak Rafal,Pucicki D.,Serafińczuk J.,Butterilng Maciej,Hirschmann E.,Wagner Andreas,Kudrawiec R.,Hommel D.

Publisher

Elsevier BV

Reference44 articles.

1. Electronic Band Structure of Highly Mismatched Semiconductor Alloys;W Walukiewicz;Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology,2008

2. Engineering of highly mismatched alloy with semiconductor and semimetallic substituent's for photovoltaic applications;B U Haq;Current Applied Physics,2017

3. Electromodulation spectroscopy of highly mismatched alloys;R Kudrawiec;Journal of Applied Physics,2019

4. Highly Mismatched Semiconductor Alloys: From Atoms to Devices;W Walukiewicz;Journal of Applied Physics,2020

5. Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3-1.55?m;H B Yuen;Journal of Applied Physics,2004

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