The Indirect Bandgap of Lattice-Matched Sigesn on Ge Using Capacitance Voltage Measurement of Mbe-Grown Pin-Diodes

Author:

Schwarz Daniel,Kasper Erich,Bärwolf Florian,Costina Ioan,Oehme Michael

Publisher

Elsevier BV

Reference23 articles.

1. Electrically pumped SiGeSn microring lasers;B Marzban;IEEE Photonics Society Summer Topicals Meeting Series (SUM), Cabo San Lucas,2022

2. Advanced GeSn/SiGeSn Group IV Heterostructure Lasers;N Von Den Driesch;Advanced Science,2018

3. SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications;S Wirths;Thin Solid Films,2014

4. Silicon Tunneling Field-Effect Transistors With Tunneling in Line With the Gate Field;I A Fischer;IEEE Electron Device Letters,2013

5. Improved Performance in GeSn/SiGeSn TFET by Hetero-Line Architecture With Staggered Tunneling Junction;H Wang;IEEE Trans Electron Devices,2019

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