Investigating the Partial Plastic Formation Mechanism of Typical Scratches on Silicon Wafers Induced by Rogue Particles During Chemical Mechanical Polishing-Reference-Cited by-同舟云学术

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Investigating the Partial Plastic Formation Mechanism of Typical Scratches on Silicon Wafers Induced by Rogue Particles During Chemical Mechanical Polishing

Published:2024 Issue: Volume: Page:
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Author:

Lu Siwen,Wang Zhanshan,Xia Jingjing,Yu Jun

Publisher

Elsevier BV

Reference30 articles.

1. Single crystal silicon wafer polishing by pretreating pad adsorbing SiO2 grains and abrasivefree slurries;Z Bu;Mater. Sci. Semicond. Process,2022

2. Investigation on the final polishing slurry and technique of silicon substrate in ULSI;Y Liu;Microelectron. Eng,2003

3. Effect of ionic strength on ruthenium CMP in H 2 O 2 -based slurries;L Jiang;Appl. Surf. Sci,2014

4. Grinding and lapping induced surface integrity of silicon wafers and its effect on chemical mechanical polishing;S Gao;Appl. Surf. Sci,2022

5. Near-field microscopy inspection of nano scratch defects on the monocrystalline silicon surface;Y Yan;Precis. Eng,2019

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