Oxidation Characteristics of Copper Oxide Thin Films Deposited by Direct Current Sputtering Under Substrate Temperature and Post-Deposition Ion Implantation-Reference-Cited by-同舟云学术

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Oxidation Characteristics of Copper Oxide Thin Films Deposited by Direct Current Sputtering Under Substrate Temperature and Post-Deposition Ion Implantation

Published:2023 Issue: Volume: Page:
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Author:

Devaraj Perumal,Peranantham Pazhanisami,Devarani Devi Kshetrimayum,Siva Kumar Valiveti Venkata,Jeyachandran Yekkoni Lakshmanan

Publisher

Elsevier BV

Reference55 articles.

1. Electronic structure of Cu 2 O, Cu 4 O 3 , and CuO: A joint experimental and theoretical study;J F Mucklich;Phys. Rev. B,2016

2. Characterization of Cu 2 O, Cu 4 O 3 , and CuO mixed phase thin films produced by microwave-activated reactive sputtering;Y Alajlani;Vacuum,2017

3. Binary copper oxide semiconductor: From materials towards devices;B K Meyer;Phys. Status Solidi B,2012

4. Giant Rydberg excitons in the copper oxide Cu2O;T Kazimierczuk;Nature,2014

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