Enhancing Atomic Ordering, Magnetic and Transport Properties of Mn2vgaheusler Alloy Thin Films Toward Negatively Spin-Polarized Charge Injection-Reference-Cited by-同舟云学术

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Enhancing Atomic Ordering, Magnetic and Transport Properties of Mn2vgaheusler Alloy Thin Films Toward Negatively Spin-Polarized Charge Injection

Published:2023 Issue: Volume: Page:
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Author:

Li Zehao,Suto Hirofumi,Barwal Vineet,Masuda Keisuke,Sasaki Taisuke,Chen Zixi,Tajiri Hiroo,Kumara Loku Singgappulige Rosantha,Koganezawa Tomoyuki,Amemiya Kenta,Kokado Satoshi,Hono Kazuhiro,Sakuraba Yuya

Publisher

Elsevier BV

Reference61 articles.

1. Heusler alloys for metal spintronics;A Hirohata;MRS Bull,2022

2. Heusler alloys: Past, properties, new alloys, and prospects;S Tavares;Prog. Mater. Sci,2023

3. Influence of film composition in Co2MnSi electrodes on tunnel magnetoresistance characteristics of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions;T Ishikawa;Appl. Phys. Lett,2009

4. Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunneling;H Liu;Appl. Phys. Lett,2012

5. Mechanism of large magnetoresistance in Co2MnSi/Ag/Co2MnSi devices with current perpendicular to the plane;Y Sakuraba;Phys. Rev. B,2010

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