Growth and structure of NdGaO3 films prepared by metal–organic deposition

Abstract

Abstract We have successfully prepared NdGaO3 films with the (h00) preferred orientation on YSZ(100) single crystalline substrate by metal – organic deposition. The structure and morphology of the NdGaO3 films were investigated by X-ray diffraction and atomic force microscopy. It was found that the crystal orientation of the NdGaO3 films depends on the heat treatment temperature and time. An optimal growth condition for highly textured NdGaO3 films was obtained. The analysis by atomic force microscopy showed that the NdGaO3 films are smooth and pinhole-free. Our results showed that the NdGaO3 films prepared by the low-cost production method of metal – organic deposition could serve as a crystalline substrate with perovskite structure for many kinds of oxide electronic devices.