Charge transport measurements in compressed bulk graphene oxide

Abstract

Abstract Charge transport measurements in compressed bulk graphene oxide (GO) have been studied within the temperature range 15-450 K. Structural properties and surface morphologies of the bulk compressed GO were studied using X-ray diffraction and transmission electron microscopy. Raman and X-ray photoelectron spectroscopies were also used to confirm the presence of graphitic phases and the various functional groups in the GO, respectively. Current-voltage characteristics of the GO measured with gold (Au) electrodes at different temperatures showed no Schottky barrier at the Au/GO interface. At low temperatures and low bias voltages, the electron transport through the compressed GO sample showed no significant voltage dependence, which is consistent with a direct tunneling mechanism at all the bias voltages (0.01 -1.0 V). It was also observed that no Fowler- Nordheim transport mechanism occurred within this bias voltage range.