New properties of halogen plasma-treated Cu films

Abstract

Abstract Luminescence activity and structure of halogen plasma-treated Cu films on Si substrate have been investigated. Peculiar photoluminescence signals in the range of 1.6 – 2.0 eV were detected both at low (from 77 to 15 K), and at room temperature. The observed luminescence peaks are not present for stoichiometric CuCl. The exposure of CuCl- and CuBr-containing layers to helium plasma, with UV-illumination, result in the formation of knots of twisted nanowires on the surface of these layers. These wires don't have luminescent activity. The accelerated degradation of luminescence of these samples in air in the presence of light illumination and ozone treatment was studied.