Characterization of CusBiS3 thin films annealing layers of BizS3-CuS chemically deposited

Abstract

Cu3BiS3 thin films with values of thickness 170 nm were obtained; these films were characterized using X-ray diffraction, Electron Microscopy Scanning, UV-Vis spectrophotometry, and photoconductivity. We obtained values of bang gap energy 1.65 eV and electrical conductivity approximately 2.58 ( Ω-cm)-1. A second layer of Cu3BiS3 was deposited over the first one, thickness increased to 450 nm and band gap energy was 1 eV and electrical conductivity approximately 1 ( Ω-cm)-1.