Affiliation:
1. Intel Corporation, USA
Abstract
The aim of this chapter is to develop an understanding of the electronic and optical properties of quantum well systems. These structures, which can be found in semiconductors, confine particles in one dimension and exhibit discrete energy levels that can be calculated using fundamental quantum mechanics. Quantum wells are formed by sandwiching a material like GaAs between two layers of a material with a wider bandgap like AlAs, and can be grown using techniques such as MBE or CVD. The electronic and optical properties of quantum wells can be modified by altering parameters such as potential and well widths. In this chapter, the authors will use the Schrödinger equation to solve for the energy levels of quantum wells and provide a quantum mechanical description of the properties of electrons in these systems. They will also use computer programs to investigate the effects of changing parameters such as potential and well widths on the properties of quantum wells.
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