Wrapped Channel FET (WCFET)

Abstract

In this article, we examined the electrical characteristic of proposed new device structure, Wrapped Channel Field Effect Transistor (WCFET). Results of WCFET have been analyzed using Atlas 3-D simulator. WCFET shows better transfer characteristics with ON-current ION of ~10-6A and leakage current IOFF of ~10-16 A. Optimization of device characteristics has done with doping concentration (ND), gate work function (ΦG) and spacer dielectric. Impact of gate length and semiconductor film thickness variation on drain current, subthreshold slope (SS) and DIBL are also investigated. Further, effects of various gate dielectric materials such as SiO2, Si3N3, HfO2 and TiO2 are examined w.r.t. switching characteristics of WCFET. To validate of device compatibility with power supply scaling, we inspected full range variation of VDS ≈ (0.05V-to-0.7V) on transfer characteristics.