Brace of Nanowire FETs in the Advancements and Miniaturizations of Recent Integrated Circuits Design

Abstract

This chapter encompasses the gradual requirements, basic working principle, inbuilt physics, structural and functional characteristics, and applications of nanowires, especially that of semiconductor nanowires in depth. Today, research and development in material science and electronics going hand in hand have opened up numerous directions for the exploration and utilization of several unique semiconducting materials in the design of novel field-effect-transistors (FETs) in the nano-scale architecture. The performance results of the basic NWFETs structures and hetero-structures along with methods to organize nanowires in the form of arrays to fulfill the requirement of integration of devices and circuits are described in detail. This chapter would be beneficial for students of undergraduate and postgraduate, researchers, and the industrial peoples as well who are working in the regime of the advancement of semiconductor technology because every aspect of nanowire and NWFETs is discussed here deeply in a single platform.