Dominant Spin Relaxation Mechanisms in Organic Semiconductor Alq3

Author:

Patibandla Sridhar1,Kanchibotla Bhargava1,Pramanik Sandipan2,Bandyopadhyay Supriyo1,Cahay Marc3

Affiliation:

1. Virginia Commonwealth University, USA

2. University of Alberta, Canada

3. University of Cincinnati, USA

Abstract

We have measured the longitudinal (T1) and transverse (T2) spin relaxation times in the organic semiconductor tris(8-hydroxyquinolinolato aluminum) - also known as Alq3 - at different temperatures and under different electric fields driving current. These measurements shed some light on the spin relaxation mechanisms in the organic. The two most likely mechanisms affecting T1 are hyperfine interactions between carrier and nuclear spins, and the Elliott-Yafet mode. On the other hand, the dominant mechanism affecting T2 of delocalized electrons in Alq3 remains uncertain, but for localized electrons (bound to defect or impurity sites), the dominant mechanism is most likely spin-phonon coupling.

Publisher

IGI Global

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