INFLUENCE OF LAYER THICKNESS ON MAGNETORESISTANCE PROPERTIES OF MULTILAYERED THIN FILMS

Abstract

In this study, the magnetoresistance properties of multilayered structures consisting of five different combinations of Pt and Co thin layers were studied in the room temperature range. Thin films were prepared by using magnetron sputtering techniques in ultra-high vacuum conditions. It has been found that the percentage of MR decreases as the thickness of the spacer layer thickness increases. For 3 nm thickness, 0.16% MR ratio is obtained, while for 4 and 5 nm these values are 0.15% and 0.10% respectively. In addition, as reference layer thickness increases, MR values are 0.10%, 0.11% and 0.15%, respectively. These results show that the prepared thin film sets can be used in technological applications such as MR based sensors and spin field transistors.