1. Page T E Jr, Benedetto J M. Extreme Latchup Susceptibility in Modern Commercial-off-the-Shelf (COTS) Monolithic 1M and 4M CMOS Static Random-Access Memory (SRAM) Devices[C]. IEEE Radiation Effects Data Workshop, 2005:1-7, doi:10.1109/REDW.2005.1532657
2. Han Jianwei, Zhang Zhenlong, Feng Guoqiang, et al. The radiation test of SRAM devices for extreme single event latch-up susceptibility and a warning to our aerospace safety[J]. Spacecr. Env. Eng., 2008, 25(3):265-267. In Chinese (韩建伟, 张振龙, 封国强, 等.单粒子锁定极端敏感器件的试 验及对我国航天安全的警示[J].航天器环境工程, 2008, 25(3):265-267)
3. Han Jianwei, Feng Guoqiang, Cai Minghui, et al. Applications of pulsed laser test on single event effect hardening for aerospace components and circuit systems[J]. Spacecr. Env. Eng., 2011, 28(2):121-125. In Chinese (韩建伟, 封国强, 蔡明辉, 等. 脉冲激光试验在宇航器件和电路系统抗单粒子效应设计中的初步应用[J]. 航天器环境工程, 2011, 28(2):121-125)
4. Huang Jianguo, Han Jianwei. Calculation of equivalent LET for pulsed laser simulating SEE[J]. Sci. China: G, 2004, 34(6):601-609. In Chinese (黄建国, 韩建伟. 脉冲激光模拟单粒子效应的等效LET计算[J]. 中国科学:G, 2004, 34(6): 601-609)
5. Yu Yongtao, Feng Guoqiang, Chen Rui, Shangguan Shipeng, Han Jianwei. Experimental study on single event latchup of SRAM K6R4016V1D and its protection[J]. Atom. Energ. Sci. Tech., 2012, 46(Supp.):587-591. In Chinese (余永涛, 封国强, 陈睿, 上官士鹏, 韩建伟. SRAMK6R4016V1D单粒子闩锁及防护试验研究[J]. 原子能科学技术, 2012, 46(增刊):587-591)