Effect of Background Pressure on Deposition Rate and Crystallinity of Deposited Silicon in Non-Equilibrium Plasma Jet CVD
Author:
Affiliation:
1. Gifu University
2. Center of Innovative Photovoltaic Systems, Gifu University
3. Renewable and Energy System Division, Graduate School of Engineering, Gifu University
Publisher
Society of Chemical Engineers, Japan
Subject
General Chemical Engineering,General Chemistry
Link
https://www.jstage.jst.go.jp/article/kakoronbunshu/41/2/41_14wh079/_pdf
Reference17 articles.
1. Abhinandan, L. and A. Holländer; “Localized Deposition of Hydrocarbon using Plasma Activated Chemical Vapour Deposition,” Thin Solid Films, 457, 241–246 (2004)
2. Bhandarkar, U. V., M. T. Swihart, S. L. Girshick and U. R. Kortshagen; “Modelling of Silicon Hydride Clustering in a Low-pressure Silane Plasma,” J. Phys. D, 33, 2731–2746 (2000)
3. Bird, B., W. Stewart and E. Lightfoot; Transport Phenomena, 2nd ed., pp. 11–39, John Wiley & Sons, U.S.A. (2007)
4. Chae, Y. K., H. Ohno, K. Eguchi and T. Yoshida; “Ultrafast Deposition of Microcrystalline Si by Thermal Plasma Chemical Vapor Deposition,” J. Appl. Phys., 89, 8311–8315 (2001)
5. Gardon, R. and J. Cobonpue; “Heat Transfer between a Flat Plate and Jets of Air Impinging on It,” Int. Develop. Heat Transf. ASME, 454–460 (1962)
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