Comparative Study and Analysis of Si/SIC and GaN/AlGaN Based Pin Diode Photo Sensors-Reference-Cited by-同舟云学术

Comparative Study and Analysis of Si/SIC and GaN/AlGaN Based Pin Diode Photo Sensors

Published:2022-04-30 Issue: Volume: Page:810-812
ISSN:2581-9429
Container-title:International Journal of Advanced Research in Science, Communication and Technology
language:en
Short-container-title:IJARSCT

Author:

Mrs. Ajanta Palit ¹,Dr. Karabi Ganguly ²,Dr. Moumita Mukherjee ³

Affiliation:

1. Bengal Institute of Technology, Kolkata, West Bengal, India

2. JIS College of Engineering, West Bengal, India

3. Adamas University, Kolkata, West Bengal, India

Abstract

The research work has been done through a comparative study and analysis of Si, Sic And GaN, AlGaN based pin diode photo sensors. The devices which are made up of grapheme based materials are actually grapheme based materials which have the properties of good optical and good electrical which can be used as photo detection. So the photo sensors made up of grapheme based materials are expected to perform in high speed opto electronic devices. The author has done a comparison in the analysis of Forward characteristics, Carrier mobility, reverse recovery time, isolation loss and insertion loss of the exotic pin based photo detectors of GaN/ AlGaN and Si SIC based devices for opto electronics applications.

Publisher

Naksh Solutions

Subject

General Medicine

Reference9 articles.

1. K. D. Stenafov et al, “Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias”, Sensors, Vol. 18, p. 118, 2018

2. M. Hamady et al, “Modeling CMOS PIN photodiode using COMSOL”, International Conference on microelectronics, 2012, DOI: 10.1109/ICM.2012.6471386

3. N. Camara, “Microwave p-i-n Diodes and Switches Based on 4H-SiC”, IEEE Electron Device Letters, Vol. 27, p. 108, 2006

4. John X.J. Zhang, Kazunori Hoshino, “Molecular Sensors and Nanodevices” (Second Edition) 2019.

5. J.V. Bellantoni, D.C. Bartle, D. payne , G.M. Dermott , S. Bandla , R. Tayrani , and L. Raffaelli L, “Monolithic GaAsPin Diode Switch Circuits For High Power MM-Wave Applications”, IEEE Trans., Vol.37, pp.2162, 1989.